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Stimulated N-doping of reduced graphene oxide on GaN under excimer laser reduction process.
- Source :
-
Materials Letters . Feb2014, Vol. 116, p412-415. 4p. - Publication Year :
- 2014
-
Abstract
- Abstract: Graphene oxide coated on GaN was simultaneously reduced and doped with nitrogen via excimer laser irradiation. Nitrogen dopant was originated from the GaN during the laser-induced dissociation at high energies. This phenomenon was confirmed by the absence of C–N bond formation in laser irradiated graphene oxide on SiO2. A top-gated field-effect transistor based on laser reduction of graphene oxide channel on GaN showed n-type behavior via the gate voltage modulation. The present findings indicate a paradigm for the formation of graphene-nitride semiconductor interfaces. [Copyright &y& Elsevier]
Details
- Language :
- English
- ISSN :
- 0167577X
- Volume :
- 116
- Database :
- Academic Search Index
- Journal :
- Materials Letters
- Publication Type :
- Academic Journal
- Accession number :
- 93346241
- Full Text :
- https://doi.org/10.1016/j.matlet.2013.11.072