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Feasibility of using sputtered AlO x film as gate insulator for high performance InGaZnO-TFTs.
- Source :
-
Superlattices & Microstructures . Jan2014, Vol. 65, p14-21. 8p. - Publication Year :
- 2014
-
Abstract
- Highlights: [•] Sputtered AlO x film as the gate insulator. [•] Effect of rf power on the electrical properties of AlO x insulator. [•] Electrical performance and bias stability of InGaZnO-TFTs. [•] Interfacial properties using C–V method. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 07496036
- Volume :
- 65
- Database :
- Academic Search Index
- Journal :
- Superlattices & Microstructures
- Publication Type :
- Academic Journal
- Accession number :
- 93349373
- Full Text :
- https://doi.org/10.1016/j.spmi.2013.10.032