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Electrical and structural properties of rapidly annealed rare-earth metal Er Schottky contacts on p-type InP.
- Source :
-
Superlattices & Microstructures . Jan2014, Vol. 65, p206-218. 13p. - Publication Year :
- 2014
-
Abstract
- Highlights: [•] I–V and C–V characteristics of Er Schottky contacts to p-InP. [•] Discrepancy between barrier heights estimated from I–V and C–V measurements. [•] Optimum annealing temperature for the Er/p-InP Schottky diode is 200°C. [•] Variation of barrier heights caused by the formation of interfacial phases at Er/p-InP interface. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 07496036
- Volume :
- 65
- Database :
- Academic Search Index
- Journal :
- Superlattices & Microstructures
- Publication Type :
- Academic Journal
- Accession number :
- 93349391
- Full Text :
- https://doi.org/10.1016/j.spmi.2013.10.043