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Defects in paramagnetic Co-doped ZnO films studied by transmission electron microscopy.
- Source :
-
Journal of Applied Physics . Dec2013, Vol. 114 Issue 24, p243503. 6p. 1 Color Photograph, 1 Black and White Photograph, 1 Chart, 3 Graphs. - Publication Year :
- 2013
-
Abstract
- We study planar defects in epitaxial Co:ZnO dilute magnetic semiconductor thin films deposited on c-plane sapphire (Al2O3), as well as the Co:ZnO/Al2O3 interface, using aberration-corrected transmission electron microscopy and electron energy-loss spectroscopy. Co:ZnO samples that were deposited using pulsed laser deposition and reactive magnetron sputtering are both found to contain extrinsic stacking faults, incoherent interface structures, and compositional variations within the first 3-4 Co:ZnO layers next to the Al2O3 substrate. The stacking fault density is in the range of 1017 cm-3. We also measure the local lattice distortions around the stacking faults. It is shown that despite the relatively high density of planar defects, lattice distortions, and small compositional variation, the Co:ZnO films retain paramagnetic properties. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 114
- Issue :
- 24
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 93390526
- Full Text :
- https://doi.org/10.1063/1.4851015