Cite
Temperature dependent subthreshold model of long channel GAA MOSFET including localized charges to study variations in its temperature sensitivity.
MLA
Gautam, Rajni, et al. “Temperature Dependent Subthreshold Model of Long Channel GAA MOSFET Including Localized Charges to Study Variations in Its Temperature Sensitivity.” Microelectronics Reliability, vol. 54, no. 1, Jan. 2014, pp. 37–43. EBSCOhost, https://doi.org/10.1016/j.microrel.2013.09.014.
APA
Gautam, R., Saxena, M., Gupta, R. S., & Gupta, M. (2014). Temperature dependent subthreshold model of long channel GAA MOSFET including localized charges to study variations in its temperature sensitivity. Microelectronics Reliability, 54(1), 37–43. https://doi.org/10.1016/j.microrel.2013.09.014
Chicago
Gautam, Rajni, Manoj Saxena, R.S. Gupta, and Mridula Gupta. 2014. “Temperature Dependent Subthreshold Model of Long Channel GAA MOSFET Including Localized Charges to Study Variations in Its Temperature Sensitivity.” Microelectronics Reliability 54 (1): 37–43. doi:10.1016/j.microrel.2013.09.014.