P[sub b]-type interface defects in (100)Si/SiO[sub 2] structures grown in ozonated water solution.

Si dangling bond interface defects (P[sub b0],P[sub b1]) were probed by electron spin resonance in entities of (100)Si with ultrathin SiO[sub 2] grown in ozonated de-ionized water solution at room temperature. After photodesorption of passivating hydrogen, P[sub b0] appears with densities up to ∼ 5 × 10[sup 12] cm[sup -2], a value five times larger than the one standardly attained with high temperature thermal growth. Thus standard quality thermal Si/SiO[sub 2] interface properties, as exposed by the P[sub b0]-type defects criterion (interface traps), are not obtained by oxidation in ozonated water solutions at room temperature. The interface quality may be upgraded by providing additional thermal budget. Yet standard qualitity is still not attained after vacuum annealing at 600°C. [ABSTRACT FROM AUTHOR]