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Post-Silicon Characterization and On-Line Prediction of Transient Thermal Field in Integrated Circuits Using Thermal System Identification.
- Source :
-
IEEE Transactions on Components, Packaging & Manufacturing Technology . Jan2014, Vol. 4 Issue 1, p37-45. 9p. - Publication Year :
- 2014
-
Abstract
- Thermal system identification (TSI) is presented as a methodology to characterize and estimate the transient thermal field of a packaged IC for various workloads considering chip-to-chip variations in electrical and thermal properties. The time–frequency duality is used to identify the thermal system as a low-pass filter in frequency domain through on-line power/thermal measurements on a packaged IC. The identified characteristic system for an individual IC is used for on-line prediction of the transient thermal field of that specific IC for a power pattern. A test-chip, fabricated in 130-nm CMOS, demonstrates the effectiveness of TSI in post-silicon characterization and prediction of transient thermal field. The application TSI in thermal analysis of multicore processors is presented. [ABSTRACT FROM PUBLISHER]
Details
- Language :
- English
- ISSN :
- 21563950
- Volume :
- 4
- Issue :
- 1
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Components, Packaging & Manufacturing Technology
- Publication Type :
- Academic Journal
- Accession number :
- 93570482
- Full Text :
- https://doi.org/10.1109/TCPMT.2013.2271504