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Improvement mechanism of resistance random access memory with supercritical CO2 fluid treatment.
- Source :
-
Journal of Supercritical Fluids . Jan2014, Vol. 85, p183-189. 7p. - Publication Year :
- 2014
-
Abstract
- Highlights: [•] The supercritical fluid treatment can efficiently reduce the operation current of resistance random access memory. [•] The dangling bonds of Sn:SiO x thin film were cross linking by the hydration–dehydration reaction by supercritical fluid treatment. [•] The current conduction mechanism of low resistance state in post-treated RRAM device was dominated by hopping conduction. [•] The current conduction mechanism of high resistance state in post-treated RRAM device was dominated by Schottky emission. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 08968446
- Volume :
- 85
- Database :
- Academic Search Index
- Journal :
- Journal of Supercritical Fluids
- Publication Type :
- Academic Journal
- Accession number :
- 93590434
- Full Text :
- https://doi.org/10.1016/j.supflu.2013.09.002