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(In,Ga)As/GaP electrical injection quantum dot laser.
- Source :
-
Applied Physics Letters . 1/6/2014, Vol. 104 Issue 1, p011113-1-011113-4. 4p. 1 Diagram, 4 Graphs. - Publication Year :
- 2014
-
Abstract
- The paper reports on the realization of multilayer (In,Ga)As/GaP quantum dot (QD) lasers grown by gas source molecular beam epitaxy. The QDs have been embedded in (Al,Ga)P/GaP waveguide structures. Laser operation at 710 nm is obtained for broad area laser devices with a threshold current density of 4.4 kA/cm2 at a heat-sink temperature of 80 K. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 104
- Issue :
- 1
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 93644389
- Full Text :
- https://doi.org/10.1063/1.4860982