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Properties of the new electronic device material La GdO3.
- Source :
-
Physica Status Solidi (B) . Jan2014, Vol. 251 Issue 1, p131-139. 9p. - Publication Year :
- 2014
-
Abstract
- The room temperature crystal structure of potential high- k dielectric LaGdO3 has been analyzed by X-ray diffraction techniques and its structural evolution with temperature has been probed by Raman spectroscopy. Rietveld refinement of the ambient XRD data established the perfectly layered B-type monoclinic crystal structure with a = 14.43 Å, b = 3.68 Å, c = 8.99 Å, and β = 100.57° which is further validated by the 21 (14 Ag and 7 Bg) Raman-active vibrational modes with centro-symmetric space group [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 03701972
- Volume :
- 251
- Issue :
- 1
- Database :
- Academic Search Index
- Journal :
- Physica Status Solidi (B)
- Publication Type :
- Academic Journal
- Accession number :
- 93662688
- Full Text :
- https://doi.org/10.1002/pssb.201349257