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Effect of quantum dot position and background doping on the performance of quantum dot enhanced GaAs solar cells.
- Source :
-
Applied Physics Letters . 1/13/2014, Vol. 104 Issue 2, p023119-1-023119-5. 5p. 1 Chart, 4 Graphs. - Publication Year :
- 2014
-
Abstract
- The effect of the position of InAs quantum dots (QD) within the intrinsic region of pin-GaAs solar cells is reported. Simulations suggest placing the QDs in regions of reduced recombination enables a recovery of open-circuit voltage (VOC). Devices with the QDs placed in the center and near the doped regions of a pin-GaAs solar cell were experimentally investigated.While the VOC of the emitter-shifted device was degraded, the center and base-shifted devices exhibited VOC comparable to the baseline structure. This asymmetry is attributed to background doping which modifies the recombination profile and must be considered when optimizing QD placement. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 104
- Issue :
- 2
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 93874268
- Full Text :
- https://doi.org/10.1063/1.4862028