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Static and Dynamic Characterization of 6.5-kV 100-A SiC Bipolar PiN Diode Modules.
- Source :
-
IEEE Transactions on Industry Applications . Jan2014, Vol. 50 Issue 1, p609-619. 11p. - Publication Year :
- 2014
-
Abstract
- High-voltage and high-current SiC bipolar diode modules are fabricated and characterized under static and dynamic conditions. The modules are built using 6 \times 6\ \mm^2 SiC chips that are fabricated on 3-in SiC substrates. Individual chips were also packaged in an ISOPLUS™ package and used to perform switching tests on the diodes. The modules have been fully characterized under static and dynamic conditions. These modules are targeted for high-voltage high-frequency applications as well as antiparallel diodes for 6.5-kV insulated gate bipolar transistors, insulated gate commutated thyristors, and injection enhanced insulated gate bipolar transistors. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00939994
- Volume :
- 50
- Issue :
- 1
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Industry Applications
- Publication Type :
- Academic Journal
- Accession number :
- 93876027
- Full Text :
- https://doi.org/10.1109/TIA.2013.2271741