Characterization of InGaN/GaN quantum well growth using monochromated valence electron energy loss spectroscopy.

MLA

Palisaitis, J., et al. “Characterization of InGaN/GaN Quantum Well Growth Using Monochromated Valence Electron Energy Loss Spectroscopy.” Journal of Applied Physics, vol. 115, no. 3, Jan. 2014, pp. 1–7. EBSCOhost, https://doi.org/10.1063/1.4861179.

APA

Palisaitis, J., Lundskog, A., Forsberg, U., Janzén, E., Birch, J., Hultman, L., & Persson, P. O. Å. (2014). Characterization of InGaN/GaN quantum well growth using monochromated valence electron energy loss spectroscopy. Journal of Applied Physics, 115(3), 1–7. https://doi.org/10.1063/1.4861179

Chicago

Palisaitis, J., A. Lundskog, U. Forsberg, E. Janzén, J. Birch, L. Hultman, and P. O. Å Persson. 2014. “Characterization of InGaN/GaN Quantum Well Growth Using Monochromated Valence Electron Energy Loss Spectroscopy.” Journal of Applied Physics 115 (3): 1–7. doi:10.1063/1.4861179.