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Physically Based Models of High Power Semiconductors Including Transient Thermal Behavior.
- Source :
-
IEEE Transactions on Power Electronics . Jan2003 Part 1 of 2, Vol. 18 Issue 1, p231. 5p. 2 Black and White Photographs, 5 Diagrams, 3 Graphs. - Publication Year :
- 2003
-
Abstract
- Focuses on a study which implemented physically based models of high power semiconductors. Description of the modeling method; Verification of the models; Conclusion.
- Subjects :
- *SEMICONDUCTORS
*POWER electronics
Subjects
Details
- Language :
- English
- ISSN :
- 08858993
- Volume :
- 18
- Issue :
- 1
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Power Electronics
- Publication Type :
- Academic Journal
- Accession number :
- 9417616
- Full Text :
- https://doi.org/10.1109/TPEL.2002.807147