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High power 2-μm room-temperature continuous-wave operation of GaSb-based strained quantum-well lasers.
- Source :
-
Chinese Physics B . Sep2013, Vol. 22 Issue 9, p094208-094210. 3p. - Publication Year :
- 2013
-
Abstract
- A high power GaSb-based laser diode with lasing wavelength at 2 μm was fabricated and optimized. With the optimized epitaxial laser structure, the internal loss and the threshold current density decreased and the internal quantum efficiency increased. For uncoated broad-area lasers, the threshold current density was as low as 144 A/cm2 (72 A/cm2 per quantum well), and the slope efficiency was 0.2 W/A. The internal loss was 11 cm−1 and the internal quantum efficiency was 27.1%. The maximum output power of 357 mW under continuous-wave operation at room temperature was achieved. The electrical and optical properties of the laser diode were improved. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 16741056
- Volume :
- 22
- Issue :
- 9
- Database :
- Academic Search Index
- Journal :
- Chinese Physics B
- Publication Type :
- Academic Journal
- Accession number :
- 94287925
- Full Text :
- https://doi.org/10.1088/1674-1056/22/9/094208