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The nonlinear optical properties of a magneto-exciton in a strained Ga0.2In0.8As/GaAs quantum dot.
- Source :
-
Chinese Physics B . Oct2013, Vol. 22 Issue 10, p107106-107112. 7p. - Publication Year :
- 2013
-
Abstract
- The magnetic field-dependent heavy hole excitonic states in a strained Ga0.2In0.8As/GaAs quantum dot are investigated by taking into account the anisotropy, non-parabolicity of the conduction band, and the geometrical confinement. The strained quantum dot is considered as a parabolic dot of InAs embedded in a GaAs barrier material. The dependence of the effective excitonic g-factor as a function of dot radius and the magnetic field strength is numerically measured. The interband optical transition energy as a function of geometrical confinement is computed in the presence of a magnetic field. The magnetic field-dependent oscillator strength of interband transition under the geometrical confinement is studied. The exchange enhancements as a function of dot radius are observed for various magnetic field strengths in a strained Ga0.2In0.8As/GaAs quantum dot. Heavy hole excitonic absorption spectra, the changes in refractive index, and the third-order susceptibility of third-order harmonic generation are investigated in the Ga0.2In0.8As/GaAs quantum dot. The result shows that the effect of magnetic field strength is more strongly dependent on the nonlinear optical property in a low-dimensional semiconductor system. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 16741056
- Volume :
- 22
- Issue :
- 10
- Database :
- Academic Search Index
- Journal :
- Chinese Physics B
- Publication Type :
- Academic Journal
- Accession number :
- 94288066
- Full Text :
- https://doi.org/10.1088/1674-1056/22/10/107106