Cite
Synaptic plasticity and memory functions achieved in a WO3−x-based nanoionics device by using the principle of atomic switch operation.
MLA
Yang, Rui, et al. “Synaptic Plasticity and Memory Functions Achieved in a WO3−x-Based Nanoionics Device by Using the Principle of Atomic Switch Operation.” Nanotechnology, vol. 24, no. 38, Sept. 2013, pp. 384003–11. EBSCOhost, https://doi.org/10.1088/0957-4484/24/38/384003.
APA
Yang, R., Terabe, K., Yao, Y., Tsuruoka, T., Hasegawa, T., Gimzewski, J. K., & Aono, M. (2013). Synaptic plasticity and memory functions achieved in a WO3−x-based nanoionics device by using the principle of atomic switch operation. Nanotechnology, 24(38), 384003–384011. https://doi.org/10.1088/0957-4484/24/38/384003
Chicago
Yang, Rui, Kazuya Terabe, Yiping Yao, Tohru Tsuruoka, Tsuyoshi Hasegawa, James K Gimzewski, and Masakazu Aono. 2013. “Synaptic Plasticity and Memory Functions Achieved in a WO3−x-Based Nanoionics Device by Using the Principle of Atomic Switch Operation.” Nanotechnology 24 (38): 384003–11. doi:10.1088/0957-4484/24/38/384003.