Cite
Strain Distributions in Non-Polar a-Plane InxGa1−xN Epitaxial Layers on r-Plane Sapphire Extracted from X-Ray Diffraction.
MLA
Gui-Juan, Zhao, et al. “Strain Distributions in Non-Polar a-Plane InxGa1−xN Epitaxial Layers on r-Plane Sapphire Extracted from X-Ray Diffraction.” Chinese Physics Letters, vol. 30, no. 9, Sept. 2013, pp. 098102–05. EBSCOhost, https://doi.org/10.1088/0256-307X/30/9/098102.
APA
Gui-Juan, Z., Shao-Yan, Y., Gui-Peng, L., Chang-Bo, L., Ling, S., Cheng-Yan, G., Xiang-Lin, L., Hong-Yuan, W., Qin-Sheng, Z., & Zhan-Guo, W. (2013). Strain Distributions in Non-Polar a-Plane InxGa1−xN Epitaxial Layers on r-Plane Sapphire Extracted from X-Ray Diffraction. Chinese Physics Letters, 30(9), 098102–098105. https://doi.org/10.1088/0256-307X/30/9/098102
Chicago
Gui-Juan, Zhao, Yang Shao-Yan, Liu Gui-Peng, Liu Chang-Bo, Sang Ling, Gu Cheng-Yan, Liu Xiang-Lin, Wei Hong-Yuan, Zhu Qin-Sheng, and Wang Zhan-Guo. 2013. “Strain Distributions in Non-Polar a-Plane InxGa1−xN Epitaxial Layers on r-Plane Sapphire Extracted from X-Ray Diffraction.” Chinese Physics Letters 30 (9): 098102–5. doi:10.1088/0256-307X/30/9/098102.