Cite
Unintentional Doping Mechanisms in GaAs/Si Films Grown by Metalorganic Chemical Vapor Deposition.
MLA
Jun, Wang, et al. “Unintentional Doping Mechanisms in GaAs/Si Films Grown by Metalorganic Chemical Vapor Deposition.” Chinese Physics Letters, vol. 30, no. 11, Nov. 2013, pp. 116801–04. EBSCOhost, https://doi.org/10.1088/0256-307X/30/11/116801.
APA
Jun, W., Can, D., Zhi-Gang, J., Yi-Fan, W., Qi, W., Yong-Qing, H., & Xiao-Min, R. (2013). Unintentional Doping Mechanisms in GaAs/Si Films Grown by Metalorganic Chemical Vapor Deposition. Chinese Physics Letters, 30(11), 116801–116804. https://doi.org/10.1088/0256-307X/30/11/116801
Chicago
Jun, Wang, Deng Can, Jia Zhi-Gang, Wang Yi-Fan, Wang Qi, Huang Yong-Qing, and Ren Xiao-Min. 2013. “Unintentional Doping Mechanisms in GaAs/Si Films Grown by Metalorganic Chemical Vapor Deposition.” Chinese Physics Letters 30 (11): 116801–4. doi:10.1088/0256-307X/30/11/116801.