Electrical properties and the double Gaussian distribution of inhomogeneous barrier heights in Se/n-GaN Schottky barrier diode.

Highlights: [•] Temperature dependent electrical characteristics of Se/n-GaN SBD have been investigated. [•] The estimated ϕbo and n are found to be 0.46eV and 3.83 to 0.92eV and 1.29 at 400K. [•] The I–V characteristics of Se/n-GaN SBD have revealed the existence of a double GD. [•] The interface state density (Nss ) is found to be decreased with an increasing temperature. [•] The reverse-bias leakage current mechanism of Se/n-GaN SBD is investigated. [Copyright &y& Elsevier]