Silicide phases formation in Co/c-Si and Co/a-Si systems during thermal annealing.

Highlights: [•] Silicide phases formation in Co/Si system during annealing was investigated. [•] Thin Co films were deposited on crystalline or pre-amorphized Si wafers. [•] Argon ions generate damage region which represents diffusion barrier. [•] The phase sequence depends on the concentration of the reacting species. [•] The observed phase transitions are consistent with predictions of EHF model. [ABSTRACT FROM AUTHOR]