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Silicide phases formation in Co/c-Si and Co/a-Si systems during thermal annealing.
- Source :
-
Applied Surface Science . Mar2014, Vol. 295, p158-163. 6p. - Publication Year :
- 2014
-
Abstract
- Highlights: [•] Silicide phases formation in Co/Si system during annealing was investigated. [•] Thin Co films were deposited on crystalline or pre-amorphized Si wafers. [•] Argon ions generate damage region which represents diffusion barrier. [•] The phase sequence depends on the concentration of the reacting species. [•] The observed phase transitions are consistent with predictions of EHF model. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 01694332
- Volume :
- 295
- Database :
- Academic Search Index
- Journal :
- Applied Surface Science
- Publication Type :
- Academic Journal
- Accession number :
- 94406979
- Full Text :
- https://doi.org/10.1016/j.apsusc.2014.01.020