InAs/InGaAsN quantum dots emitting at 1.55 μm grown by molecular beam epitaxy

Authors :: Ustinov, Victor M.
Egorov, Anton Yu.
Odnoblyudov, Vladimir A.
Kryzhanovskaya, Natalya V.
Musikhin, Yurii G.
Tsatsul’nikov, Andrey F.
Alferov, Zhores I.
Source :: Journal of Crystal Growth. Apr2003, Vol. 251 Issue 1-4, p388. 4p.
Publication Year :: 2003
Abstract: InAs/InGaAsN quantum dots have been grown by molecular beam epitaxy on GaAs substrates. Transmission electron microscopy shows the increase in the island size as compared to the InAs/InGaAs quantum dots. Room temperature photoluminescence at 1.55 μm has been demonstrated whose intensity was comparable to that of the InGaAsN/GaAs quantum wells emitting at 1.3 μm. The effect of nitrogen concentration on the PL peak position and intensity has been studied. [Copyright &y& Elsevier]