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Asymmetric reversible diode-like resistive switching behaviors in ferroelectric BaTiO3 thin films.
- Source :
-
Chinese Physics B . 2014, Vol. 23 Issue 2, p027702-027706. 5p. - Publication Year :
- 2014
-
Abstract
- In this work, the resistive switching behaviors of ferroelectrictric BaTiO3/La0.67Sr0.33MnO3 heterostructures deposited by pulsed laser deposition are investigated. The BaTiO3 films show both well-established P—E hysteresis loops, and asymmetric reversible diode-like resistive switching behaviors, involving no forming process. It is found that both the ON/OFF ratio and the stability of resistive switching are substantially dependent on operation voltage (Vmax). At a Vmax of 15 V, a large ON/OFF resistance ratio above 1000 is obtained at a Vmax of 15 V, which is able to maintain stability up to 70-switching cycles. The above resistive switching behaviors can be understood by modulating interface Schottky barriers as demonstrated by I—V curve fitting. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 16741056
- Volume :
- 23
- Issue :
- 2
- Database :
- Academic Search Index
- Journal :
- Chinese Physics B
- Publication Type :
- Academic Journal
- Accession number :
- 94417422
- Full Text :
- https://doi.org/10.1088/1674-1056/23/2/027702