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Simulation Design of a High Q Tunable Capacitor with Comb Structure.

Authors :
LI Yan-ning
RUAN Yong
YOU Zheng
XU Hong-wei
LI Yu-gang
Source :
Acta Armamentarii. Oct2013, Vol. 34 Issue 10, p1236-1242. 7p.
Publication Year :
2013

Abstract

A design scheme of micro-electro-mechanical system ( MEMS) tunable capacitor with comb structure is proposed. Simulation design was implemented in terms of structure, electrical properties and process. FEM simulation indicates that, for the tunable capacitor, the capacitance tuning ratio is 3.45: 1, the tuning range is 88. 16 ~ 392. 19 fF at 67 V drive voltage, the resonant frequency is 36 GHz, Q factor is 223 (1 GHz), and the reflection attenuation is 0. 002 25 dB, insertion loss is 42. 75 dB, respectively. Compared with other tunable capacitors, the design has high Q, high adjustable capacitance rate and simple process. [ABSTRACT FROM AUTHOR]

Details

Language :
Chinese
ISSN :
10001093
Volume :
34
Issue :
10
Database :
Academic Search Index
Journal :
Acta Armamentarii
Publication Type :
Academic Journal
Accession number :
94442162
Full Text :
https://doi.org/10.3969/j.issn.1000-1093.2013.10.007