Cite
Study of atomic layer deposited Zr O2 and Zr O2/ Ti O2 films for resistive switching application.
MLA
Kärkkänen, Irina, et al. “Study of Atomic Layer Deposited Zr O2 and Zr O2/ Ti O2 Films for Resistive Switching Application.” Physica Status Solidi. A: Applications & Materials Science, vol. 211, no. 2, Feb. 2014, pp. 301–09. EBSCOhost, https://doi.org/10.1002/pssa.201330034.
APA
Kärkkänen, I., Shkabko, A., Heikkilä, M., Niinistö, J., Ritala, M., Leskelä, M., Hoffmann, E. S., & Waser, R. (2014). Study of atomic layer deposited Zr O2 and Zr O2/ Ti O2 films for resistive switching application. Physica Status Solidi. A: Applications & Materials Science, 211(2), 301–309. https://doi.org/10.1002/pssa.201330034
Chicago
Kärkkänen, Irina, Andrey Shkabko, Mikko Heikkilä, Jaakko Niinistö, Mikko Ritala, Markku Leskelä, Eifert, Susanne Hoffmann, and Rainer Waser. 2014. “Study of Atomic Layer Deposited Zr O2 and Zr O2/ Ti O2 Films for Resistive Switching Application.” Physica Status Solidi. A: Applications & Materials Science 211 (2): 301–9. doi:10.1002/pssa.201330034.