Growth of high-quality SnS epitaxial films by H2S flow pulsed laser deposition.

SnS epitaxial films were grown on MgO (100) substrates by pulsed laser deposition using a H2S gas as an S source. High growth temperature and high H2S gas flow rate caused re-evaporation and etching of the deposited films; therefore, the optimum condition was limited to a narrow region around 400 °C. The measured bandgap 1.08 eV is consistent with the previously reported theoretical calculation. The films with a S/Sn ratio of ∼1.0 showed the largest mobility of ∼37 cm2/(Vs). The hole transport was dominated by domain boundary potential barriers ∼0.05 eV in height. [ABSTRACT FROM AUTHOR]