Cite
Analytical Modeling of Capacitances for GaN HEMTs, Including Parasitic Components.
MLA
Zhang, Aixi, et al. “Analytical Modeling of Capacitances for GaN HEMTs, Including Parasitic Components.” IEEE Transactions on Electron Devices, vol. 61, no. 3, Mar. 2014, pp. 755–61. EBSCOhost, https://doi.org/10.1109/TED.2014.2298255.
APA
Zhang, A., Zhang, L., Tang, Z., Cheng, X., Wang, Y., Chen, K. J., & Chan, M. (2014). Analytical Modeling of Capacitances for GaN HEMTs, Including Parasitic Components. IEEE Transactions on Electron Devices, 61(3), 755–761. https://doi.org/10.1109/TED.2014.2298255
Chicago
Zhang, Aixi, Lining Zhang, Zhikai Tang, Xiaoxu Cheng, Yan Wang, Kevin J. Chen, and Mansun Chan. 2014. “Analytical Modeling of Capacitances for GaN HEMTs, Including Parasitic Components.” IEEE Transactions on Electron Devices 61 (3): 755–61. doi:10.1109/TED.2014.2298255.