Cite
A High-Voltage Low-Standby-Power Startup Circuit Using Monolithically Integrated E/D-Mode AlGaN/GaN MIS-HEMTs.
MLA
Jiang, Qimeng, et al. “A High-Voltage Low-Standby-Power Startup Circuit Using Monolithically Integrated E/D-Mode AlGaN/GaN MIS-HEMTs.” IEEE Transactions on Electron Devices, vol. 61, no. 3, Mar. 2014, pp. 762–68. EBSCOhost, https://doi.org/10.1109/TED.2014.2298459.
APA
Jiang, Q., Tang, Z., Liu, C., Lu, Y., & Chen, K. J. (2014). A High-Voltage Low-Standby-Power Startup Circuit Using Monolithically Integrated E/D-Mode AlGaN/GaN MIS-HEMTs. IEEE Transactions on Electron Devices, 61(3), 762–768. https://doi.org/10.1109/TED.2014.2298459
Chicago
Jiang, Qimeng, Zhikai Tang, Cheng Liu, Yunyou Lu, and Kevin J. Chen. 2014. “A High-Voltage Low-Standby-Power Startup Circuit Using Monolithically Integrated E/D-Mode AlGaN/GaN MIS-HEMTs.” IEEE Transactions on Electron Devices 61 (3): 762–68. doi:10.1109/TED.2014.2298459.