Open-air type plasma chemical vaporization machining by applying pulse-width modulation control.

Photolithography techniques have been used to enable the low-cost and high-speed transfer of a pattern onto a silicon wafer. However, owing to the high integration of semiconductors, extreme ultraviolet will be increasingly used as the exposure light source and all optics must be reflective to focus light because the wavelength of the light will be so short that it cannot pass through a lens. The form accuracy of reflective optics affects the accuracy of transfer, and a flatness of less than 32 nm on a 6 inch photomask substrate is required according to the International Technology Roadmap for Semiconductors roadmap. Plasma chemical vaporization machining is an ultraprecise figuring technique that enables a form accuracy of nanometre order to be obtained. In our previous study, the removal volume was controlled by changing the scanning speed of the worktable. However, a discrepancy between the theoretical scanning speed and the actual scanning speed occurred owing to the inertia of the worktable when the change in speed was rapid. As an attempt to resolve this issue, we controlled the removal volume by controlling the electric power applied during plasma generation while maintaining a constant scanning speed. The methods that we adapted to control the applied electric power were amplitude-modulation (AM) control and pulse-width modulation (PWM) control. In this work, we evaluate the controllability of the material removal rate in the AM and PWM control modes. [ABSTRACT FROM AUTHOR]