Top electrode-dependent resistance switching behaviors of lanthanum-doped ZnO film memory devices.

Lanthanum-doped ZnO (ZnLaO) polycrystalline thin films were deposited on Pt/Ti/SiO/Si substrates by a chemical solution deposition method. Metal/La-doped ZnO/Pt sandwich structures were constructed by depositing different top electrodes (Ag and Pt). Unipolar switching and bipolar switching characteristics were investigated in Pt/La-doped ZnO/Pt and Ag/La-doped ZnO/Pt structures, respectively. Compared with the undoped devices (Pt/ZnO/Pt and Ag/ZnO/Pt), the La-doped devices exhibits superior resistive switching performances, such as narrow distribution of the resistive switching properties ( R, R, V, and V), higher R/ R ratio and sharp switching transition. [ABSTRACT FROM AUTHOR]