Cite
In situ X-ray investigation of changing barrier growth temperatures on InGaN single quantum wells in metal-organic vapor phase epitaxy.
MLA
Ju, Guangxu, et al. “In Situ X-Ray Investigation of Changing Barrier Growth Temperatures on InGaN Single Quantum Wells in Metal-Organic Vapor Phase Epitaxy.” Journal of Applied Physics, vol. 115, no. 9, Mar. 2014, pp. 094906-1-094906-6. EBSCOhost, https://doi.org/10.1063/1.4867640.
APA
Ju, G., Honda, Y., Tabuchi, M., Takeda, Y., & Amano, H. (2014). In situ X-ray investigation of changing barrier growth temperatures on InGaN single quantum wells in metal-organic vapor phase epitaxy. Journal of Applied Physics, 115(9), 094906-1-094906-6. https://doi.org/10.1063/1.4867640
Chicago
Ju, Guangxu, Yoshio Honda, Masao Tabuchi, Yoshikazu Takeda, and Hiroshi Amano. 2014. “In Situ X-Ray Investigation of Changing Barrier Growth Temperatures on InGaN Single Quantum Wells in Metal-Organic Vapor Phase Epitaxy.” Journal of Applied Physics 115 (9): 094906-1-094906-6. doi:10.1063/1.4867640.