Cite
Low on-resistance high-voltage lateral double-diffused metal oxide semiconductor with a buried improved super-junction layer.
MLA
Wei, Wu, et al. “Low On-Resistance High-Voltage Lateral Double-Diffused Metal Oxide Semiconductor with a Buried Improved Super-Junction Layer.” Chinese Physics B, vol. 23, no. 3, Mar. 2014, pp. 038503–07. EBSCOhost, https://doi.org/10.1088/1674-1056/23/3/038503.
APA
Wei, W., Bo, Z., Xiao-Rong, L., Jian, F., & Zhao-Ji, L. (2014). Low on-resistance high-voltage lateral double-diffused metal oxide semiconductor with a buried improved super-junction layer. Chinese Physics B, 23(3), 038503–038507. https://doi.org/10.1088/1674-1056/23/3/038503
Chicago
Wei, Wu, Zhang Bo, Luo Xiao-Rong, Fang Jian, and Li Zhao-Ji. 2014. “Low On-Resistance High-Voltage Lateral Double-Diffused Metal Oxide Semiconductor with a Buried Improved Super-Junction Layer.” Chinese Physics B 23 (3): 038503–7. doi:10.1088/1674-1056/23/3/038503.