Photoluminescence of n-type GaN film in an argon plasma.

The photoluminescence of n-type GaN thin films in an argon plasma condition has been studied byin situmeasurement. The characteristic near-band-edge (NBE) peak and yellow luminescence (YL) of GaN films are observed in the spectra. However, compared to the luminescence of GaN in air and in a vacuum, in the plasma of 80 W power, the NBE peak and YL intensity first increase dramatically and then decrease with extended time. The effects are attributed mainly to an increasing temperature induced by the plasma, but also to a lesser extent by damage to the film caused by the plasma. [ABSTRACT FROM PUBLISHER]