STRAIN ENERGY BAND ENGINEERING APPROACH TO AIN/GaN/InN HETEROJUNCTION DEVICES.

Our new Strain and Energy Band Engineering approach allows us to control, modulate or eliminate the strain thereby significantly enhancing the performance of electronic and optoelectronic devices on SiC and sapphire substrates using a new-pulsed atomic layer epitaxy procedure. New types of high power high temperature transistors with improved performance were fabricated. XRD, PL and AFM spectra are used to establish a high structural and optical quality of the quaternary multiple quantum wells. We have also demonstrated the use of PALE deposited quaternary AllnGaN multiple quantum wells in the active region ofa UV LED with emission ranging from 305 nm to 304 nm. [ABSTRACT FROM AUTHOR]