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Technology for III-N heterogeneous mixed-signal electronics.
- Source :
-
Physica Status Solidi. A: Applications & Materials Science . Apr2014, Vol. 211 Issue 4, p769-774. 6p. - Publication Year :
- 2014
-
Abstract
- III-N devices are suitable for high power RF/microwave amplifier, high temperature electronics, and power switches applications, and the peripheral mixed-signal electronics with sensing, protection, and control functions could provide optimized performance, increased functionality, and enhanced reliability. This paper addresses the technology to discuss the technology options of implementing III-N mixed-signal circuits, and then reviews the recent progress in the expansion of design library, based on monolithically integrated enhancement/depletion (E/D)-mode AlGaN/GaN HEMTs on GaN-on-silicon substrates. An integrated GaN proportional-to-absolute-temperature (PTAT) voltage source. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 18626300
- Volume :
- 211
- Issue :
- 4
- Database :
- Academic Search Index
- Journal :
- Physica Status Solidi. A: Applications & Materials Science
- Publication Type :
- Academic Journal
- Accession number :
- 95425439
- Full Text :
- https://doi.org/10.1002/pssa.201300543