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A Dual-Band SP6T T/R Switch in SOI CMOS With 37-dBm P-0.1\ {dB} for GSM/W-CDMA Handsets.
- Source :
-
IEEE Transactions on Microwave Theory & Techniques . Apr2014 Part 1, Vol. 62 Issue 4, p861-870. 10p. - Publication Year :
- 2014
-
Abstract
- This paper presents the circuit techniques to achieve superior linearity and isolation for a single-pole six-throw transmit/receive (T/R) switch designed for GSM/W-CDMA dual-band operation at 0.85–0.9 and 1.8–1.9 GHz. Implemented in a 0.18-\mum thick-film silicon-on-insulator (SOI) CMOS process, the switch employs an LC-tuned asymmetric topology for the transmit (Tx) and receive (Rx) branch to handle the high-power GSM transmitter requirement. The proposed design also features a switchable double LC-tank acting as a variable impedance block to relax the tradeoff among linearity, insertion loss (IL), and isolation. Feed-forward capacitors, ac-floating bias techniques, and floating-body SOI devices are utilized to further improve the linearity. The measured P-0.1\ {dB}, IL and Tx–Rx isolation in the lower and upper band are 37.2–35.6 dBm, 0.43–0.75 dB, and 45–37 dB, respectively. The proposed T/R switch design in SOI CMOS is an important building block toward more compact and lower cost RF frond-end modules, which integrate the switch, antenna tuning module, and control logic on the same chip. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189480
- Volume :
- 62
- Issue :
- 4
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Microwave Theory & Techniques
- Publication Type :
- Academic Journal
- Accession number :
- 95433540
- Full Text :
- https://doi.org/10.1109/TMTT.2014.2308306