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Pulsed modulation doping of AlxGa1-xN (x>0.6) AlGaN epilayers for deep UV optoelectronic devices.

Authors :
Chen, Hung-Chi
Ahmad, Iftikhar
Zhang, Bin
Coleman, Antwon
Sultana, Mahbuba
Adivarahan, Vinod
Khan, Asif
Source :
Physica Status Solidi (C). Apr2014, Vol. 11 Issue 3/4, p408-411. 4p.
Publication Year :
2014

Abstract

We report a new approach of pulsed modulation doping (PMD) to achieve n-type doping in AlxGa1-xN (x>0.6) layers. In this approach silane flow is cyclically modulated during n-AlGaN growth which enable us to grow low dislocation density n-AlGaN templates for UV (λ ∼ 280 nm) LEDs. We observed that dislocation density for un-doped AlGaN layers on high quality AlN layers is 3.3×108cm-2. This dislocation density was increased to 2.3×109 cm-2 for conventionally grown n-AlGaN layers on AlGaN templates. We were able to reduced dislocation density in n-AlGaN layers to 3.5×108cm-2 using PMD of n-AlGaN layers. The dislocation densities in these samples were studies using etch pit density (EPD) and Williamson and Hall studies. A comparative study of LED structures on conventional and PMD doped n-AlGaN showed improved performance for LED emitting at 280 nm for LED structure on PMD n-doped AlGaN layers. In this paper the details of our growth procedure, the epi-structure X-ray, AFM, and other characterizations will be presented. (© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
18626351
Volume :
11
Issue :
3/4
Database :
Academic Search Index
Journal :
Physica Status Solidi (C)
Publication Type :
Academic Journal
Accession number :
95465949
Full Text :
https://doi.org/10.1002/pssc.201300661