All-epitaxial fabrication of a nanowire plasmon laser structure.

An all-epitaxial approach was demonstrated to create coaxial plasmon laser structures composed of an aluminum plasmonic metal/SiNx dielectric/InGaN quantum well shell surrounding a p-GaN nanowire core. Strong UV luminescence was observed from as-grown vertically-aligned arrays as well as horizontally-aligned nanowires transferred to a transparent carrier wafer. (© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [ABSTRACT FROM AUTHOR]