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Pseudomorphic AlxGa1-xN MQW based deep ultraviolet light emitting diodes over sapphire.
- Source :
-
Physica Status Solidi (C) . Apr2014, Vol. 11 Issue 3/4, p798-801. 4p. - Publication Year :
- 2014
-
Abstract
- We report on the fabrication of AlGaN-based pseudomorphic light-emitting diodes over sapphire substrate with peak emission at 275 nm. A 0.6 µm thick n-AlGaN contact layer was grown using a novel pulsed silicon modulation doping technique, which enabled us to achieve a sheet resistance of ∼500Ω/□. In order to mitigate current crowding and Joule heating issues, we implemented the pixel-LED design with a total p-active area of 360 µm x 360 µm. Packaged devices exhibited light output powers of ∼7 mW at 100 mA dc pump current. The forward voltage was ∼ 8.8 V. (© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 18626351
- Volume :
- 11
- Issue :
- 3/4
- Database :
- Academic Search Index
- Journal :
- Physica Status Solidi (C)
- Publication Type :
- Academic Journal
- Accession number :
- 95466059
- Full Text :
- https://doi.org/10.1002/pssc.201300682