Effect of temperature on advanced Si-based substrates performance for RF passive integration.

Highlights: [•] PSi and TR HR-Si substrates provide HR properties (>3kΩ-cm) for RF applications. [•] The resistivity of trap-rich HR-Si and PSi decrease with temperature increase. [•] Permittivity of PSi is almost 4 times lower than TR HR-Si. [•] The non-linear properties of PSi and TR HR-Si increase with temperature. [•] At high temperature (175°C) PSi behaves better than TR HR-Si. [ABSTRACT FROM AUTHOR]