Back to Search
Start Over
Effect of temperature on advanced Si-based substrates performance for RF passive integration.
- Source :
-
Microelectronic Engineering . May2014, Vol. 120, p205-209. 5p. - Publication Year :
- 2014
-
Abstract
- Highlights: [•] PSi and TR HR-Si substrates provide HR properties (>3kΩ-cm) for RF applications. [•] The resistivity of trap-rich HR-Si and PSi decrease with temperature increase. [•] Permittivity of PSi is almost 4 times lower than TR HR-Si. [•] The non-linear properties of PSi and TR HR-Si increase with temperature. [•] At high temperature (175°C) PSi behaves better than TR HR-Si. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 01679317
- Volume :
- 120
- Database :
- Academic Search Index
- Journal :
- Microelectronic Engineering
- Publication Type :
- Academic Journal
- Accession number :
- 95502696
- Full Text :
- https://doi.org/10.1016/j.mee.2013.08.004