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Threading dislocation reduction in epitaxial GaN using V-groove patterned sapphire substrate with embedded silica nanospheres.
- Source :
-
Materials Letters . May2014, Vol. 123, p97-100. 4p. - Publication Year :
- 2014
-
Abstract
- Abstract: A dramatic reduction in threading dislocation density and stress-relaxation was simultaneously achieved in GaN epilayer using a silica nanosphere embedded structure on V-groove patterned sapphire substrate by metal-organic chemical vapor deposition. By depositing silica nanospheres at two different instances during a growth process, a two-step growth that included selective area growth and lateral overgrowth was initiated. This approach led to GaN template of high crystal quality, which was confirmed from x-ray diffraction rocking curve and micro-Raman measurements and further corroborated by transmission electron microscopy. GaN light-emitting diode fabricated by this strategy showed a significant enhancement in the light output power. [Copyright &y& Elsevier]
Details
- Language :
- English
- ISSN :
- 0167577X
- Volume :
- 123
- Database :
- Academic Search Index
- Journal :
- Materials Letters
- Publication Type :
- Academic Journal
- Accession number :
- 95502898
- Full Text :
- https://doi.org/10.1016/j.matlet.2014.02.091