EXPERIMENTAL STUDIES OF PHOTON ABSORPTION IN SILICON AND NIOBIUM.

The absorption of photon through silicon and niobium is measured by using Si(Li) X-ray detector. We use Fe55 radioactive source to produce fluorescence lines from Si, Cl and Ti. The experimental results show that the absorption strongly depends on the energy of the incoming photon, material thickness and the atomic number of the absorber. The photon fraction absorbed is consistent when Nb and Si are placed together as an absorbing material and when they are placed one by one and resulting fraction is added. The experimental results agree well with the calculated values of the photons fraction absorbed at five different energies. [ABSTRACT FROM AUTHOR]