Nonvolatile memory device based on SiO2/ GaN/AlGaN/GaN heterostructure.

Demonstrated is a nonvolatile memory device based on a SiO2/GaN/ AlGaN/GaN heterostructure in which the upper GaN layer acted as a storage node. Charges were stored in and released from the upper GaN layer by applying positive and negative gate biases, respectively. The top SiO2 layer acted as a blocking layer. The threshold voltage shift was ~ 3 V between the program and erase modes and the retention characteristics were very stable over 10000 s. [ABSTRACT FROM AUTHOR]