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Nonvolatile memory device based on SiO2/ GaN/AlGaN/GaN heterostructure.
- Source :
-
Electronics Letters (Wiley-Blackwell) . 4/11/2013, Vol. 49 Issue 8, p1-2. 2p. 1 Diagram, 2 Graphs. - Publication Year :
- 2013
-
Abstract
- Demonstrated is a nonvolatile memory device based on a SiO2/GaN/ AlGaN/GaN heterostructure in which the upper GaN layer acted as a storage node. Charges were stored in and released from the upper GaN layer by applying positive and negative gate biases, respectively. The top SiO2 layer acted as a blocking layer. The threshold voltage shift was ~ 3 V between the program and erase modes and the retention characteristics were very stable over 10000 s. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00135194
- Volume :
- 49
- Issue :
- 8
- Database :
- Academic Search Index
- Journal :
- Electronics Letters (Wiley-Blackwell)
- Publication Type :
- Academic Journal
- Accession number :
- 95604794
- Full Text :
- https://doi.org/10.1049/el.2012.4083