Cite
Evaluation and Solutions for P/E Window Instability Induced by Electron Trapping in High- $\kappa$ Intergate Dielectrics of Flash Memory Cells.
MLA
Tang, Baojun, et al. “Evaluation and Solutions for P/E Window Instability Induced by Electron Trapping in High- $\kappa$ Intergate Dielectrics of Flash Memory Cells.” IEEE Transactions on Electron Devices, vol. 61, no. 5, May 2014, pp. 1299–306. EBSCOhost, https://doi.org/10.1109/TED.2014.2313041.
APA
Tang, B., Zhang, W. D., Degraeve, R., Breuil, L., Blomme, P., Zhang, J. F., Ji, Z., Zahid, M., Toledano-Luque, M., Van den Bosch, G., & Van Houdt, J. (2014). Evaluation and Solutions for P/E Window Instability Induced by Electron Trapping in High- $\kappa$ Intergate Dielectrics of Flash Memory Cells. IEEE Transactions on Electron Devices, 61(5), 1299–1306. https://doi.org/10.1109/TED.2014.2313041
Chicago
Tang, Baojun, Wei Dong Zhang, Robin Degraeve, Laurent Breuil, Pieter Blomme, Jian Fu Zhang, Zhigang Ji, et al. 2014. “Evaluation and Solutions for P/E Window Instability Induced by Electron Trapping in High- $\kappa$ Intergate Dielectrics of Flash Memory Cells.” IEEE Transactions on Electron Devices 61 (5): 1299–1306. doi:10.1109/TED.2014.2313041.