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Lanthanum Gadolinium Oxide: A New Electronic Device Material for CMOS Logic and Memory Devices.
- Source :
-
Materials (1996-1944) . Apr2014, Vol. 7 Issue 4, p2669-2696. 28p. - Publication Year :
- 2014
-
Abstract
- A comprehensive study on the ternary dielectric, LaGdO3, synthesized and qualified in our laboratory as a novel high-k dielectric material for logic and memory device applications in terms of its excellent features that include a high linear dielectric constant (k) of ~22 and a large energy bandgap of ~5.6 eV, resulting in sufficient electron and hole band offsets of ~2.57 eV and ~1.91 eV, respectively, on silicon, good thermal stability with Si and lower gate leakage current densities within the International Technology Roadmap for Semiconductors (ITRS) specified limits at the sub-nanometer electrical functional thickness level, which are desirable for advanced complementary metal-oxide-semiconductor (CMOS), bipolar (Bi) and BiCMOS chips applications, is presented in this review article. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 19961944
- Volume :
- 7
- Issue :
- 4
- Database :
- Academic Search Index
- Journal :
- Materials (1996-1944)
- Publication Type :
- Academic Journal
- Accession number :
- 95791281
- Full Text :
- https://doi.org/10.3390/ma7042669