Study of material removal processes of the crystal silicon substrate covered by an oxide film under a silica cluster impact: Molecular dynamics simulation.

Highlights: [•] The impact of clusters on Si substrates covered by oxide films was studied by MD. [•] The optimal oxide film for the maximum of the number of atoms removed would occur. [•] The optimal oxide film is a continuous monolayer molecular structure. [•] The optimal oxide film is due to the combined effects of adhesion and penetration. [•] The contact–penetration–adhesion material removal process occurs during CMP process. [Copyright &y& Elsevier]