Back to Search
Start Over
Bias-independent growth of carbon nanowalls by microwave electron-cyclotron resonance plasma CVD.
- Source :
-
Journal of Experimental Nanoscience . Jul2014, Vol. 9 Issue 6, p575-581. 7p. - Publication Year :
- 2014
-
Abstract
- The investigations reported here describe the synthesis of carbon nanowalls (CNWs) by microwave electron-cyclotron resonance (ECR) plasma-assisted chemical vapour deposition (PACVD) process without an application of external bias to the substrate during growth. CNWs were grown on silicon (Si) substrates using hydrogen (H2)/methane (CH4) plasma at 650°C substrate temperature. Nickel (Ni) was used as a catalyst for the synthesis of CNWs. To the best of our knowledge, this is the first report that describes the bias-independent growth of CNWs using the ECR PACVD process. Formation of CNWs is confirmed by scanning electron microscopy and Raman spectroscopy. The discussion part also includes a possible growth mechanism for CNWs in terms of the role of surface plasmons. [ABSTRACT FROM PUBLISHER]
Details
- Language :
- English
- ISSN :
- 17458080
- Volume :
- 9
- Issue :
- 6
- Database :
- Academic Search Index
- Journal :
- Journal of Experimental Nanoscience
- Publication Type :
- Academic Journal
- Accession number :
- 95861971
- Full Text :
- https://doi.org/10.1080/17458080.2012.678890