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Total dose radiation effects of hybrid bulk/SOI CMOS active pixel with buried channel SOI source follower.
- Source :
-
Microelectronics Journal . Apr2014, Vol. 45 Issue 4, p477-481. 5p. - Publication Year :
- 2014
-
Abstract
- Abstract: A CMOS active pixel with pinned photodiode which used in-pixel buried-channel (BC) transistor has been reported, and the characteristic of CMOS image sensor with in-pixel buried-channel transistor was carried out. In this paper, we have a research on a hybrid bulk/silicon-on-insulator (SOI) CMOS active pixel with pinned photodiode which use buried channel SOI NMOS Source Flower (SF) by simulation. We study the basic characteristics of buried-channel SOI NMOS and the characteristics of CMOS active pixel optimized by using in-pixel buried-channel SOI transistor under radiation. The results show that, compared to the conventional active pixel with the standard surface-channel (SC) SOI NMOS SF, the dark random noise of the pixel which uses in-pixel buried channel SOI NMOS SF can be reduced under the radiation and the output swing is improved. [Copyright &y& Elsevier]
Details
- Language :
- English
- ISSN :
- 00262692
- Volume :
- 45
- Issue :
- 4
- Database :
- Academic Search Index
- Journal :
- Microelectronics Journal
- Publication Type :
- Academic Journal
- Accession number :
- 95929260
- Full Text :
- https://doi.org/10.1016/j.mejo.2014.02.021