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In-Situ Raman Spectroscopy Study of Photoinduced Structural Changes in Ge- rich Chalcogenide Films.
- Source :
-
Journal of the American Ceramic Society . May2014, Vol. 97 Issue 5, p1421-1424. 4p. - Publication Year :
- 2014
-
Abstract
- Very few studies have been directed at the compositional dependence of the intrinsic photostability of the Ge x Se1− x binary ChG films especially for the Ge-rich films with the mean coordination number ( MCN) larger than 2.67. Here, by measuring the in-situ transmission changes, it shows that the photosensitivity (e.g., photobleaching, PB) of the Ge-rich films (as compared to the GeSe2 film) is attenuated, in fact almost completely eliminated in the film with the largest MCN. A straightforward technique, in-situ Raman spectroscopy, is used to record the time-resolved intrinsic structural changes during the irradiation of the films. The result indicates a transition from PB towards photostability occurs at the critical composition of GeSe2 corresponding to the structural phase transition. The stressed rigid structures of the Ge-rich films inhibit any significant photo-structural changes. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00027820
- Volume :
- 97
- Issue :
- 5
- Database :
- Academic Search Index
- Journal :
- Journal of the American Ceramic Society
- Publication Type :
- Academic Journal
- Accession number :
- 96015292
- Full Text :
- https://doi.org/10.1111/jace.12879