Cite
900 V/1.6 m\Omega\cdotcm^2 Normally Off Al2O3/GaN MOSFET on Silicon Substrate.
MLA
Wang, Maojun, et al. “900 V/1.6 M\Omega\cdotcm^2 Normally Off Al2O3/GaN MOSFET on Silicon Substrate.” IEEE Transactions on Electron Devices, vol. 61, no. 6, June 2014, pp. 2035–40. EBSCOhost, https://doi.org/10.1109/TED.2014.2315994.
APA
Wang, M., Wang, Y., Zhang, C., Xie, B., Wen, C. P., Wang, J., Hao, Y., Wu, W., Chen, K. J., & Shen, B. (2014). 900 V/1.6 m\Omega\cdotcm^2 Normally Off Al2O3/GaN MOSFET on Silicon Substrate. IEEE Transactions on Electron Devices, 61(6), 2035–2040. https://doi.org/10.1109/TED.2014.2315994
Chicago
Wang, Maojun, Ye Wang, Chuan Zhang, Bing Xie, Cheng P. Wen, Jinyan Wang, Yilong Hao, Wengang Wu, Kevin J. Chen, and Bo Shen. 2014. “900 V/1.6 M\Omega\cdotcm^2 Normally Off Al2O3/GaN MOSFET on Silicon Substrate.” IEEE Transactions on Electron Devices 61 (6): 2035–40. doi:10.1109/TED.2014.2315994.